A photolithography model used in an optical proximity correction process modifies an image output intensity of a point disposed along a two dimensional plane and having coordinates (x,y) in accordance with a gradient of a convolution of a mask value at the point and a sampling pattern function selected at the point. The sampling pattern function includes, in part, a first subset of sampling patterns and a second subset of sampling patterns. The first subset of sampling patterns includes first and second nodes. The second subset of sampling patterns include first and second antinodes. The gradient of the convolution of the mask value and the first and second nodes of the first subset are scaled by a first coefficient. The gradient of the convolution of the mask value and the first and second antinodes of the second subset are scaled by a second coefficient.