Invention Grant
- Patent Title: Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
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Application No.: US16785987Application Date: 2020-02-10
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Publication No.: US10854258B2Publication Date: 2020-12-01
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2017-034758 20170227
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/04 ; H01L43/10 ; H01L27/22 ; H01L29/82 ; H01L43/08 ; H01L27/105 ; H01L21/8239

Abstract:
Provided is a spin current magnetization rotational element including: a first ferromagnetic metal layer for a magnetization direction to be changed; and a spin-orbit torque wiring. The spin-orbit torque wiring has a structure in which a spin conduction layer and an interfacial spin generation layer are alternately laminated in the first direction, the number of a plurality of the interfacial spin generation layers is two or greater, and in the spin-orbit torque wiring, one of the plurality of interfacial spin generation layers is closest to the first ferromagnetic metal layer.
Public/Granted literature
- US20200176043A1 SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY Public/Granted day:2020-06-04
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