Invention Grant
- Patent Title: Accessing memory cells in parallel in a cross-point array
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Application No.: US16419807Application Date: 2019-05-22
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Publication No.: US10854287B2Publication Date: 2020-12-01
- Inventor: Hernan A. Castro
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G06F3/06

Abstract:
Methods and structures for accessing memory cells in parallel in a cross-point array include accessing in parallel a first memory cell disposed between a first selected column and a first selected row and a second memory cell disposed between a second selected column different from the first selected column and a second selected row different from the first selected row. Accessing in parallel includes simultaneously applying access biases between the first selected column and the first selected row and between the second selected column and the second selected row. The accessing in parallel is conducted while the cells are in a thresholded condition or while the cells are in a post-threshold recovery period.
Public/Granted literature
- US20190341102A1 ACCESSING MEMORY CELLS IN PARALLEL IN A CROSS-POINT ARRAY Public/Granted day:2019-11-07
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