Invention Grant
- Patent Title: Spatial atomic layer deposition chamber with plasma pulsing to prevent charge damage
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Application No.: US16217978Application Date: 2018-12-12
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Publication No.: US10854428B2Publication Date: 2020-12-01
- Inventor: Tsutomu Tanaka , Dmitry A. Dzilno , Alexander V. Garachtchenko , Keiichi Tanaka
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01J37/32 ; H01L21/02 ; H01L21/285 ; H01L21/687 ; C23C16/455 ; C23C16/505
Abstract:
Apparatus and methods of processing a substrate in a plasma enhanced spatial atomic layer deposition chamber. A substrate is moved through one or more plasma processing regions and one or more non-plasma processing regions while the plasma power is pulsed to prevent a voltage differential on the substrate from exceeding a breakdown voltage of the substrate or device being formed on the substrate.
Public/Granted literature
- US20190180985A1 Spatial Atomic Layer Deposition Chamber With Plasma Pulsing To Prevent Charge Damage Public/Granted day:2019-06-13
Information query
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