Invention Grant
- Patent Title: In-situ real-time plasma chamber condition monitoring
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Application No.: US16355138Application Date: 2019-03-15
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Publication No.: US10854433B2Publication Date: 2020-12-01
- Inventor: Tzu-Yen Hsieh , Sidda Reddy Kurakula
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/66 ; H01L21/3065
Abstract:
Methods for in-situ and real-time chamber condition monitoring is provided. For example, in one embodiment, for each wafer in a chamber, a frequency and wavelength of the free radicals in the chamber is monitored in-situ. The frequency and wavelength of the free radicals are associated with at least one selected chemical. The associated free radicals are compared to an index. The index includes a target range for each chemical in the at least one selected chemical.
Public/Granted literature
- US20200176233A1 IN-SITU REAL-TIME PLASMA CHAMBER CONDITION MONITORING Public/Granted day:2020-06-04
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