Invention Grant
- Patent Title: Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus
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Application No.: US16387996Application Date: 2019-04-18
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Publication No.: US10854434B2Publication Date: 2020-12-01
- Inventor: Yujie Yang , Tongwen Zhang
- Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201610930978 20161031
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/35 ; H01J25/50

Abstract:
Magnetron, magnetron sputtering chamber, and magnetron sputtering apparatus are provided. The magnetron has a rotation center, and includes a first outer magnetic pole and a first inner magnetic pole of opposite polarities. The first outer magnetic pole has an annular structure around the rotation center. The first inner magnetic pole is located on the inner side of the first outer magnetic pole, and a first magnetic field track is formed between the first inner magnetic pole and the first outer magnetic pole. A straight line starting from the rotation center and along one of the radial directions passes through the first magnetic field track at least twice in succession, and the magnetic-field directions at the two positions of the first magnetic field track that the straight line passes through twice in succession are opposite to each other.
Public/Granted literature
- US20190244796A1 MAGNETRON, MAGNETRON SPUTTERING CHAMBER, AND MAGNETRON SPUTTERING APPARATUS Public/Granted day:2019-08-08
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