Invention Grant
- Patent Title: Film forming method, method of manufacturing semiconductor device, and film forming device
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Application No.: US16238663Application Date: 2019-01-03
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Publication No.: US10854447B2Publication Date: 2020-12-01
- Inventor: Tatsuji Nagaoka
- Applicant: Denso Corporation
- Applicant Address: JP Kariya
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya
- Agency: Dinsmore & Shohl LLP
- Priority: JP2018-002839 20180111
- Main IPC: C23C16/448
- IPC: C23C16/448 ; H01L21/02 ; H01L21/67 ; C23C16/02 ; C23C16/40 ; C23C16/46
Abstract:
A film forming method of forming a film on a substrate includes: annealing the substrate; and supplying mist of a raw material solution of the film to a surface of the substrate after the annealing while heating the substrate at a temperature lower than a temperature of the substrate during the annealing.
Public/Granted literature
- US20190214248A1 FILM FORMING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND FILM FORMING DEVICE Public/Granted day:2019-07-11
Information query
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