Invention Grant
- Patent Title: Plasma generating device, plasma sputtering device, and plasma sputtering method
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Application No.: US16482400Application Date: 2018-01-30
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Publication No.: US10854448B2Publication Date: 2020-12-01
- Inventor: Kazunori Takahashi , Jun Fukushima , Akira Ando , Yasumasa Sasaki
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Miyagi
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Miyagi
- Agency: Sughrue Mion, PLLC
- Priority: JP2017-015548 20170131
- International Application: PCT/JP2018/002876 WO 20180130
- International Announcement: WO2018/143164 WO 20180809
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; C23C14/35 ; H05H1/46

Abstract:
A plasma sputtering device including one or a plurality of plasma generating devices each including an insulating tube having an expanding inner diameter and having a gas injection port formed in an end portion or a side portion thereof, a first electromagnet or a permanent magnet group which can apply a static magnetic field, and a high frequency antenna; a second electromagnet which is disposed in a region downstream of the plasma generating device(s) and which can form a curved magnetic force line structure; a target mechanism which includes a permanent magnet embedded therein and a cooling mechanism and which can apply a DC or high frequency voltage; a substrate stage facing the target mechanism; a second permanent magnet group around the substrate stage; and a heat insulating mechanism between a target material and the target mechanism.
Public/Granted literature
- US20190362969A1 PLASMA GENERATING DEVICE, PLASMA SPUTTERING DEVICE, AND PLASMA SPUTTERING METHOD Public/Granted day:2019-11-28
Information query
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