A substrate processing method includes holding a substrate horizontally, supplying water-containing processing liquid to an upper surface of the substrate, forming a low surface tension liquid film, covering the upper surface by supplying that liquid to the substrate's upper surface, supplying a gas to a center region of the liquid film to form an opening in the center, widening the opening in order to remove the film, rotating the substrate around a predetermined rotational axis along a vertical direction, blowing, in the opening widening step, the gas toward a gas supply position that is set further inward than a peripheral edge of the opening on the upper surface of the substrate, and moving the gas supply position toward the peripheral edge of the upper surface of the substrate, and supplying, the low surface tension liquid toward a liquid landing position that is set further outward and moving the liquid landing position toward the peripheral edge of the upper surface of the substrate.