Invention Grant
- Patent Title: Structure and method for enhancing robustness of ESD device
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Application No.: US16021200Application Date: 2018-06-28
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Publication No.: US10854501B2Publication Date: 2020-12-01
- Inventor: Alexander Kalnitsky , Jen-Chou Tseng , Chia-Wei Hsu , Ming-Fu Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/02 ; H01L29/06 ; H01L29/73 ; H01L29/66

Abstract:
Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.
Public/Granted literature
- US20180315641A1 Structure and Method for Enhancing Robustness of ESD Device Public/Granted day:2018-11-01
Information query
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