Invention Grant
- Patent Title: Heat dissipation structures
-
Application No.: US16528207Application Date: 2019-07-31
-
Publication No.: US10854530B1Publication Date: 2020-12-01
- Inventor: Yun-Wei Cheng , Chun-Hao Chou , Kuo-Cheng Lee , Ying-Hao Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/48 ; H01L25/065

Abstract:
The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.
Information query
IPC分类: