- Patent Title: Semiconductor device and semiconductor device manufacturing method
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Application No.: US16502803Application Date: 2019-07-03
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Publication No.: US10854560B2Publication Date: 2020-12-01
- Inventor: Shuichi Sawamoto , Koji Iwabu , Katsuhiro Takao , Akihito Hirai , Joichi Saito
- Applicant: AOI Electronics Co., Ltd. , Mitsubishi Electric Corporation
- Applicant Address: JP Takamatsu JP Tokyo
- Assignee: AOI Electronics Co., Ltd.,Mitsubishi Electric Corporation
- Current Assignee: AOI Electronics Co., Ltd.,Mitsubishi Electric Corporation
- Current Assignee Address: JP Takamatsu JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2015-136216 20150707
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; H01L21/48 ; H01L23/495

Abstract:
A semiconductor device includes: an island that is formed by a metallic layer including a single metallic layer or a plurality of different metallic layers; a semiconductor chip provided upon an upper surface of the island, and having a pair of side portions mutually opposing each other; a plurality of signal terminals disposed at an external periphery of at least the pair of side portions of the semiconductor chip, and formed by the metallic layer; a grounding terminal disposed at an external periphery of the plurality of signal terminals, and formed by the metallic layer; electrically conductive connection members that are connected between each of a plurality of electrodes of the semiconductor chip and each of the plurality of signal terminals; sealing resin that seals the island, the semiconductor chip, the electrically conductive connection members, the plurality of signal terminals, and the grounding terminal, so that a lower surface of the island, lower surfaces of the plurality of signal terminals, and a lower surface of the grounding terminal are exposed to the exterior; and a metallic shielding layer that covers over an outer peripheral side surface and an upper surface of the sealing resin, and a portion of the grounding terminal.
Public/Granted literature
- US20190326227A1 Semiconductor Device and Semiconductor Device Manufacturing Method Public/Granted day:2019-10-24
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