Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16042317Application Date: 2018-07-23
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Publication No.: US10854564B2Publication Date: 2020-12-01
- Inventor: Tung-Liang Shao , Yu-Chia Lai , Hsien-Ming Tu , Chang-Pin Huang , Ching-Jung Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L21/78 ; H01L21/268 ; H01L21/56 ; H01L21/784

Abstract:
A semiconductor device includes a substrate includes a first layer and a second layer over the first layer, a bump disposed over the second layer, a molding disposed over the second layer and surrounding the bump, and a retainer disposed over the second layer, wherein the retainer is disposed between the molding and a periphery of the substrate. Further, a method of manufacturing a semiconductor device includes providing a substrate, disposing several bumps on the substrate, disposing a retainer on the substrate and surrounding the bumps, and disposing a molding between the bumps and the retainer.
Public/Granted literature
- US20180331059A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-11-15
Information query
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