Invention Grant
- Patent Title: Integrated fan-out package and method of fabricating the same
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Application No.: US16027275Application Date: 2018-07-04
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Publication No.: US10854570B2Publication Date: 2020-12-01
- Inventor: Hui-Jung Tsai , Hung-Jui Kuo , Jyun-Siang Peng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/48 ; H01L25/065 ; H01L25/00 ; H01L23/538 ; H01L23/498

Abstract:
A method of fabricating an integrated fan-out package is provided. The method includes the following steps. An integrated circuit component is provided on a substrate. An insulating encapsulation is formed on the substrate to encapsulate sidewalls of the integrated circuit component. A redistribution circuit structure is formed along a build-up direction on the integrated circuit component and the insulating encapsulation. The formation of the redistribution circuit structure includes the following steps. A dielectric layer and a plurality of conductive vias embedded in the dielectric layer are formed, wherein a lateral dimension of each of the conductive vias decreases along the build-up direction. A plurality of conductive wirings is formed on the plurality of conductive vias and the dielectric layer. An integrated fan-out package of the same is also provided.
Public/Granted literature
- US20190035759A1 INTEGRATED FAN-OUT PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-01-31
Information query
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