Invention Grant
- Patent Title: Forming metal bonds with recesses
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Application No.: US16569124Application Date: 2019-09-12
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Publication No.: US10854574B2Publication Date: 2020-12-01
- Inventor: Ming-Fa Chen , Hsien-Wei Chen , Sung-Feng Yeh , Wen-Chih Chiou
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/00 ; H01L23/00 ; H01L23/48 ; H01L23/538 ; H01L21/78 ; H01L21/311 ; H01L21/768 ; H01L21/321
Abstract:
A method includes forming a first device die, which includes depositing a first dielectric layer, and forming a first metal pad in the first dielectric layer. The first metal pad includes a recess. The method further includes forming a second device die including a second dielectric layer and a second metal pad in the second dielectric layer. The first device die is bonded to the second device die, with the first dielectric layer being bonded to the second dielectric layer, and the first metal pad being bonded to the second metal pad.
Public/Granted literature
- US20200006288A1 Forming Metal Bonds with Recesses Public/Granted day:2020-01-02
Information query
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