Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15694838Application Date: 2017-09-03
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Publication No.: US10854576B2Publication Date: 2020-12-01
- Inventor: Yuji Karakane , Masatoshi Fukuda , Soichi Homma , Masayuki Miura , Naoyuki Komuta , Yuka Akahane , Yukifumi Oyama
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2017-046390 20170310
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L25/065 ; H01L23/29 ; H01L25/00 ; H01L21/56 ; H01L21/683 ; H01L23/00 ; H01L23/498 ; H01L21/768 ; H01L23/31

Abstract:
A semiconductor device includes a wiring substrate having a first surface, a stacked body on the first surface, the stacked body comprising a first chip, a second chip having a through via and positioned between the first chip and the first surface, and a third chip, a first resin contacting the first surface and the third chip, and a second resin sealing the stacked body. The first and second resins are made of different materials.
Public/Granted literature
- US20180261574A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-09-13
Information query
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