Invention Grant
- Patent Title: Semiconductor package with improved power integrity
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Application No.: US16287372Application Date: 2019-02-27
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Publication No.: US10854585B2Publication Date: 2020-12-01
- Inventor: Yong Hoon Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0084572 20180720
- Main IPC: H01L25/16
- IPC: H01L25/16 ; H01L23/538 ; H01L23/31 ; H01L23/00

Abstract:
A semiconductor package includes a connection member having first and second surfaces opposing each other and including a redistribution layer, an integrated circuit chip disposed on the first surface of the connection member, and including a plurality of units, at least one capacitor on the first surface of the connection member and in proximity to the integrated circuit chip, and an encapsulant on the first surface of the connection member and encapsulating the integrated circuit chip and the at least one capacitor, wherein the plurality of units include core power units selected from the group consisting of a central processing unit, a graphics processing unit, and an artificial intelligence unit, at least one of the core power units is disposed adjacent to one edge of the integrated circuit chip, and the at least one capacitor is disposed adjacent to the one edge of the integrated circuit chip.
Public/Granted literature
- US20200027864A1 SEMICONDUCTOR PACKAGE Public/Granted day:2020-01-23
Information query
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