Invention Grant
- Patent Title: Semiconductor diode
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Application No.: US14620772Application Date: 2015-02-12
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Publication No.: US10854598B2Publication Date: 2020-12-01
- Inventor: Anton Mauder , Philipp Seng
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/07 ; H01L29/872 ; H01L29/868 ; H01L29/861 ; H02M7/06 ; H02M7/219 ; H01L29/16
Abstract:
A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor.
Public/Granted literature
- US20150162325A1 SEMICONDUCTOR DIODE Public/Granted day:2015-06-11
Information query
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