Invention Grant
- Patent Title: Offset gate contact
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Application No.: US16578101Application Date: 2019-09-20
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Publication No.: US10854604B1Publication Date: 2020-12-01
- Inventor: ChihWei Kuo , Haining Yang , Jun Yuan , Kern Rim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H03K19/0185 ; H02M7/515

Abstract:
Offsetting or modulating the location of a gate between two transistors may achieve a lower power circuit and a higher speed circuit depending on the new location of the gate. In one example, a gate between a PFET transistor and an NFET transistor may be offset towards the PFET transistor to achieve a higher speed circuit than a conventional circuit with the gate located equal distance between the transistors. In another example, a gate between a PFET transistor and an NFET transistor may be offset towards the NFET transistor to achieve a lower power circuit than a conventional circuit with the gate located equal distance between the transistors.
Information query
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