Invention Grant
- Patent Title: Memory device and method of forming the same
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Application No.: US15719466Application Date: 2017-09-28
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Publication No.: US10854618B2Publication Date: 2020-12-01
- Inventor: Chien Hung Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Marquez IP Law Office, PLLC
- Agent Juan Carlos A. Marquez
- Main IPC: H01L27/11524
- IPC: H01L27/11524 ; H01L27/11582 ; H01L27/11529 ; H01L27/1157 ; H01L27/11548 ; H01L27/11573 ; H01L27/11556 ; H01L27/11575
Abstract:
A memory device includes: a conductive layer coupled to a reference voltage level; a first storage portion vertically coupled to a first surface of the conductive layer; and a second storage portion vertically coupled to a second surface of the conductive layer; wherein the second surface is opposite to the first surface.
Public/Granted literature
- US20190096898A1 MEMORY DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2019-03-28
Information query
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