According to one embodiment, a semiconductor memory device includes: first interconnect layers; second interconnect layers; a first memory pillar extending through the first interconnect layers; a second memory pillar extending through the second interconnect layers; a first film provided above the first interconnect layers, having a planar shape corresponding to the first interconnect layers and extending in the first direction; and a second film provided above the second interconnect layers, separate from the first film in the second direction, having a planar shape corresponding to the second interconnect layers and extending in the first direction. The first and second films have a compressive stress higher than a silicon oxide film.