Provided is an active matrix substrate that includes a thin film transistor that has a first semiconductor layer and an ESD protection circuit. The ESD protection circuit includes a diode element. The diode element has a first electrode in a gate metal layer, a second semiconductor layer that overlaps a first electrode, and a second electrode and a third electrode electrically connected to a second semiconductor layer in a source metal layer. First and second electrodes of the diode element are electrically connected. The ESD protection circuit further includes a reserve diode structure. The reserve diode structure includes a fourth electrode in the gate metal layer and is in an electrically floating state, and a third semiconductor layer that is formed in the same layer as the first and second semiconductor layers and overlaps the fourth electrode with an insulation layer in between.