A display apparatus includes: at thin film transistor on a substrate; and a capacitor on the substrate, the capacitor including a first storage electrode and a second storage electrode. The thin film transistor includes: a semiconductor layer on the substrate, including: a channel region in which are disposed: bridged grain lines defined by portions of the semiconductor layer having an amount of a dopant, and semiconductor lines defined by portions of the semiconductor having a dopant amount less than that of the bridged grain lines and forming an interface with the bridged grain lines, and source and drain regions disposed at opposing sides of the channel region; and a gate electrode overlapping the semiconductor layer with a gate insulation film therebetween, the gate electrode including: first gate electrodes corresponding to the semiconductor lines, respectively, and a second gate electrode covering the gate electrodes.