A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.