Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US15438675Application Date: 2017-02-21
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Publication No.: US10854718B2Publication Date: 2020-12-01
- Inventor: Woochul Jeon
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L29/861
- IPC: H01L29/861 ; H01L29/20 ; H01L27/07 ; H01L27/02 ; H01L29/205 ; H01L21/8252 ; H01L27/06
Abstract:
In one embodiment, a method of forming a HEM diode may comprise forming the HEM diode with high forward voltage that is greater than one of a gate-to-source threshold voltage of a HEMT or a forward voltage of a P-N diode.
Public/Granted literature
- US20180240791A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE AND METHOD THEREFOR Public/Granted day:2018-08-23
Information query
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