Invention Grant
- Patent Title: Atomic layer deposition methods and structures thereof
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Application No.: US15790739Application Date: 2017-10-23
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Publication No.: US10854725B2Publication Date: 2020-12-01
- Inventor: Hsin-Yi Lee , Cheng-Yen Tsai , Da-Yuan Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L21/28 ; H01L21/285 ; H01L21/67 ; H01L27/088 ; H01L29/51 ; H01L29/78 ; H01L29/66

Abstract:
A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.
Public/Granted literature
- US20180061957A1 ATOMIC LAYER DEPOSITION METHODS AND STRUCTURES THEREOF Public/Granted day:2018-03-01
Information query
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