- Patent Title: Composite spacer enabling uniform doping in recessed fin devices
-
Application No.: US15957212Application Date: 2018-04-19
-
Publication No.: US10854733B2Publication Date: 2020-12-01
- Inventor: Veeraraghavan S. Basker , Zuoguang Liu , Tenko Yamashita , Chun-Chen Yeh
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Robert Sullivan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/08 ; H01L29/161 ; H01L29/16 ; H01L29/78 ; H01L21/20 ; H01L21/02 ; H01L21/225 ; H01L21/268 ; H01L21/311 ; H01L21/324
Abstract:
A semiconductor device that includes at least one fin structure and a gate structure present on a channel portion of the fin structure. An epitaxial semiconductor material is present on at least one of a source region portion and a drain region portion on the fin structure. The epitaxial semiconductor material includes a first portion having a substantially conformal thickness on a lower portion of the fin structure sidewall and a second portion having a substantially diamond shape that is present on an upper surface of the source portion and drain portion of the fin structure. A spacer present on first portion of the epitaxial semiconductor material.
Public/Granted literature
- US20180248017A1 COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES Public/Granted day:2018-08-30
Information query
IPC分类:
