Invention Grant
- Patent Title: Method for forming semiconductor structure with contact over source/drain structure
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Application No.: US16105830Application Date: 2018-08-20
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Publication No.: US10854736B2Publication Date: 2020-12-01
- Inventor: Andrew Joseph Kelly , Yusuke Oniki
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/08 ; H01L29/78 ; H01L21/3213 ; B82Y10/00 ; H01L29/775 ; H01L29/06 ; H01L21/8234 ; H01L29/417 ; H01L29/45
Abstract:
Methods for manufacturing semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a source/drain structure over a substrate and forming a metal layer over the source/drain structure. The method for manufacturing a semiconductor structure further includes reacting a portion of the metal layer with the source/drain structure to form a metallic layer by using an etching solvent. In addition, the etching solvent includes (a) a first component and (b) a second component. The first component includes an acid, and the second component includes propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), or a combination thereof.
Public/Granted literature
- US20180374936A1 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH CONTACT OVER SOURCE/DRAIN STRUCTURE Public/Granted day:2018-12-27
Information query
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