Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US16555648Application Date: 2019-08-29
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Publication No.: US10854802B2Publication Date: 2020-12-01
- Inventor: Kyota Sugitani
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JP2018-162883 20180831
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/22 ; H01L33/00

Abstract:
A method for manufacturing a semiconductor device includes: forming a first metal portion on a substrate, the first metal portion comprising a plurality of pores; preparing a structure body comprising a semiconductor stacked body, wherein a concave portion is provided in a first surface of the structure body; and bonding the first metal portion to the structure body, such that a first part of the first metal portion is bonded to the concave portion of the first surface, and a second part of the first metal portion is bonded to a part of the first surface other than a location where the concave portion is provided. In bonding the first metal portion to the structure body, the first metal portion is bonded to the first surface such that at least a portion of the concave portion is filled with the first metal portion.
Public/Granted literature
- US10892392B2 Method for manufacturing semiconductor device Public/Granted day:2021-01-12
Information query
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