Invention Grant
- Patent Title: Semiconductor light source and method for manufacturing a semiconductor light source
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Application No.: US15938521Application Date: 2018-03-28
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Publication No.: US10855051B2Publication Date: 2020-12-01
- Inventor: Martin Möhrle , Michael Theurer , Ariane Sigmund , Ute Troppenz
- Applicant: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- Applicant Address: DE
- Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- Current Assignee: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- Current Assignee Address: DE
- Agency: Haynes and Boone, LLP
- Priority: DE102015219056 20151001
- Main IPC: H01S5/022
- IPC: H01S5/022 ; H01S5/028 ; H01S5/40 ; H01S5/50 ; H01S5/026 ; H01S5/22 ; H01S5/343 ; H01S5/14 ; G02B6/42 ; H01S5/12 ; H01S5/125

Abstract:
What is shown is a method for manufacturing a semiconductor light source. The semiconductor light source has a substrate and a layer sequence arranged above the substrate, the same having a light-emitting layer and an upper boundary layer arranged above the light-emitting layer. The layer sequence is patterned in order to form a light-emitting stripe for defining the semiconductor light source and an alignment stripe, extending in parallel thereto, as a horizontal alignment mark at the same time. Then, a cover layer is applied on the patterned layer sequence and a part of the cover layer is removed in order to expose the alignment stripe and expose a region of the layer sequence outside the light-emitting stripe and spaced apart from a light-entrance edge or a light-exit edge of the light-emitting stripe as a vertical alignment mark.
Public/Granted literature
- US20180219350A1 SEMICONDUCTOR LIGHT SOURCE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR LIGHT SOURCE Public/Granted day:2018-08-02
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