Invention Grant
- Patent Title: Method and system for a silicon-based optical phase modulator with high modal overlap
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Application No.: US16518916Application Date: 2019-07-22
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Publication No.: US10855378B2Publication Date: 2020-12-01
- Inventor: Subal Sahni , Kam-Yan Hon , Attila Mekis , Gianlorenzo Masini , Lieven Verslegers
- Applicant: Luxtera LLC.
- Applicant Address: US DE Wilmington
- Assignee: Luxtera LLC
- Current Assignee: Luxtera LLC
- Current Assignee Address: US DE Wilmington
- Agency: Patterson + Sheridan, LLP
- Main IPC: H04B10/548
- IPC: H04B10/548 ; G02F1/025

Abstract:
Methods and systems for a silicon-based optical phase modulator with high modal overlap may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.
Public/Granted literature
- US20200162166A1 Method And System For A Silicon-Based Optical Phase Modulator With High Modal Overlap Public/Granted day:2020-05-21
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