Invention Grant
- Patent Title: Microphone and manufacture thereof
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Application No.: US15962904Application Date: 2018-04-25
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Publication No.: US10856085B2Publication Date: 2020-12-01
- Inventor: Hongjun Yu
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Applicant Address: CN CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201710279682 20170426
- Main IPC: H04R17/02
- IPC: H04R17/02 ; H04R19/04 ; H04R31/00 ; H04R19/00

Abstract:
A microphone and its manufacturing method, relating to semiconductor techniques. The microphone comprises a substrate with a back through-hole going through the substrate; a first electrode layer on the substrate covering the back through-hole; a back plate on the substrate, wherein the back plate and the first electrode layer form a cavity, and the first electrode layer comprises a gap connecting the back through-hole and the cavity; and a second electrode layer in the cavity and on a bottom surface of the back plate. In this inventive concept, the gap in the first electrode layer increases the sensitivity of the first electrode layer and thus improves the Signal-to-Noise Ratio (SNR).
Public/Granted literature
- US20180317018A1 MICROPHONE AND MANUFACTURE THEREOF Public/Granted day:2018-11-01
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