Invention Grant
- Patent Title: High density, low stress amorphous carbon film, and process and equipment for its deposition
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Application No.: US15600247Application Date: 2017-05-19
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Publication No.: US10858727B2Publication Date: 2020-12-08
- Inventor: Jingjing Liu , Zhong Qiang Hua , Adolph Miller Allen , Michael W. Stowell , Srinivas D. Nemani , Chentsau Ying , Bhargav Citla , Viachslav Babayan , Andrej Halabica
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/06 ; C23C14/35 ; H01J37/32 ; C23C14/54 ; H01L21/311 ; H01L21/02 ; H01L21/033 ; C23C14/34

Abstract:
A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.
Public/Granted literature
- US20180051368A1 HIGH DENSITY, LOW STRESS AMORPHOUS CARBON FILM, AND PROCESS AND EQUIPMENT FOR ITS DEPOSITION Public/Granted day:2018-02-22
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