Invention Grant
- Patent Title: Atomic layer deposition method
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Application No.: US15371068Application Date: 2016-12-06
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Publication No.: US10858736B2Publication Date: 2020-12-08
- Inventor: Chia-Yi Chuang , Hsing-Jui Lee , Ming-Te Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C30B25/14 ; C23C16/458 ; H01L21/02 ; H01J37/32 ; H01L21/314 ; C30B31/16 ; C23C16/46
Abstract:
An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.
Public/Granted literature
- US20170081761A1 Atomic Layer Deposition Method Public/Granted day:2017-03-23
Information query
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