Invention Grant
- Patent Title: Device and method of detecting leakage current generation condition in USB interface
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Application No.: US16025335Application Date: 2018-07-02
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Publication No.: US10859640B2Publication Date: 2020-12-08
- Inventor: Eun-hye Ko , Je-kook Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0116660 20170912
- Main IPC: G01R31/69
- IPC: G01R31/69 ; H01R13/66 ; G06F13/42 ; G06F13/40 ; G01R31/50 ; H03K17/687 ; G01R27/14

Abstract:
A device for detecting a leakage current generation condition in a universal serial bus (USB) interface including at least one pull-up circuit connected to the at least one power pin, and a port controller configured to detect at least one impedance between a ground pin and at least one power pin, detect a leakage current generation condition in the at least one power pin based on the at least one impedance detected, and activate a detection signal in response to the leakage current generation condition being detected, the port controller configured to detect the at least one impedance by controlling the at least one pull-up circuit to pull up the at least one power pin and detecting a voltage of the at least one power pin may be provided.
Public/Granted literature
- US20190079130A1 DEVICE AND METHOD OF DETECTING LEAKAGE CURRENT GENERATION CONDITION IN USB INTERFACE Public/Granted day:2019-03-14
Information query
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