Invention Grant
- Patent Title: Lithography mask and method
-
Application No.: US16567729Application Date: 2019-09-11
-
Publication No.: US10859902B2Publication Date: 2020-12-08
- Inventor: Shiang-Bau Wang , Syun-Ming Jang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; H01L21/027 ; G03F1/46 ; G03F7/20 ; G03F1/76 ; G03F1/80 ; G03F1/52 ; G03F1/42 ; G03F1/40

Abstract:
In an embodiment, a photomask includes: a substrate over a first conductive layer, the substrate formed of a low thermal expansion material (LTEM); a second conductive layer over the first conductive layer; a reflective film stack over the substrate; a capping layer over the reflective film stack; an absorption layer over the capping layer; and an antireflection (ARC) layer over the absorption layer, where the ARC layer and the absorption layer have a plurality of openings in a first region exposing the capping layer, where the ARC layer, the absorption layer, the capping layer, and the reflective film stack have a trench in a second region exposing the second conductive layer.
Public/Granted literature
- US20200004134A1 Lithography Mask and Method Public/Granted day:2020-01-02
Information query