Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US16601957Application Date: 2019-10-15
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Publication No.: US10860042B2Publication Date: 2020-12-08
- Inventor: Atsuhiro Ichikawa , Keita Ikai
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H03K17/567
- IPC: H03K17/567 ; G05F1/46 ; H03K17/16

Abstract:
In one embodiment, a control circuit for a high side driver forms alternate signals to control a store mode and a maintain mode. An embodiment of the control circuit stores a voltage that is greater than an input voltage which results in storing a large charge for at least a portion of one of the cycles. The charge is used to supply operating voltage to the driver for at least a portion of another of the cycles.
Public/Granted literature
- US20200225687A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2020-07-16
Information query
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