Invention Grant
- Patent Title: Memristor based logic gate
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Application No.: US16079160Application Date: 2017-02-20
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Publication No.: US10860291B2Publication Date: 2020-12-08
- Inventor: Abusaleh Muhammad Jabir , Xiaohan Yang , Adedotun Adedeji Adeyemo
- Applicant: OXFORD BROOKES UNIVERSITY
- Applicant Address: GB Oxford
- Assignee: OXFORD BROOKES UNIVERSITY
- Current Assignee: OXFORD BROOKES UNIVERSITY
- Current Assignee Address: GB Oxford
- Agency: Shumaker, Loop & Kendrick, LLP
- Agent William J. Clemens
- Priority: GB1603089.2 20160223
- International Application: PCT/GB2017/050431 WO 20170220
- International Announcement: WO2017/144862 WO 20170831
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G06F7/501 ; G11C13/00 ; H03K19/0175 ; H03K19/173 ; H03K19/20 ; H03K19/21

Abstract:
A logic gate includes first and second inputs, first through fourth memristors each having a positive terminal and a negative terminal, and first and second outputs. The memristors are connected in a bridge arrangement: the negative terminal of the first memristor and the positive terminal of the second memristor are connected to the first input; the negative terminal of the third memristor and the positive terminal of the fourth memristor are connected to the second input; the negative terminal of the second memristor and the negative terminal of the fourth memristor are connected to the first output; and the positive terminal of the first memristor and the positive terminal of the third memristor are connected to the second output. A voltage of at least one of the outputs, or the voltage difference between the outputs, corresponds to the result of a logic operation relative to voltages applied to the inputs.
Public/Granted literature
- US20190056915A1 MEMRISTOR BASED LOGIC GATE Public/Granted day:2019-02-21
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