Invention Grant
- Patent Title: Binary, ternary and bit serial compute-in-memory circuits
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Application No.: US16839013Application Date: 2020-04-02
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Publication No.: US10860682B2Publication Date: 2020-12-08
- Inventor: Phil Knag , Gregory K. Chen , Raghavan Kumar , Huseyin Ekin Sumbul , Abhishek Sharma , Sasikanth Manipatruni , Amrita Mathuriya , Ram Krishnamurthy , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G06F17/16
- IPC: G06F17/16 ; G11C11/419 ; G11C11/418 ; G11C7/12 ; G11C8/08 ; G06G7/16 ; G06G7/22 ; G11C11/56 ; G06F9/30 ; G11C7/10 ; G06N3/063

Abstract:
A binary CIM circuit enables all memory cells in a memory array to be effectively accessible simultaneously for computation using fixed pulse widths on the wordlines and equal capacitance on the bitlines. The fixed pulse widths and equal capacitance ensure that a minimum voltage drop in the bitline represents one least significant bit (LSB) so that the bitline voltage swing remains safely within the maximum allowable range. The binary CIM circuit maximizes the effective memory bandwidth of a memory array for a given maximum voltage range of bitline voltage.
Public/Granted literature
- US20200233923A1 BINARY, TERNARY AND BIT SERIAL COMPUTE-IN-MEMORY CIRCUITS Public/Granted day:2020-07-23
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