Invention Grant
- Patent Title: High-density neuromorphic computing element
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Application No.: US15488419Application Date: 2017-04-14
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Publication No.: US10860923B2Publication Date: 2020-12-08
- Inventor: Borna J. Obradovic , Titash Rakshit , Mark S. Rodder
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06N3/063
- IPC: G06N3/063 ; H01L29/808 ; H01L27/11521 ; H01L29/66 ; H01L29/788 ; H01L29/423 ; H01L21/28

Abstract:
A neuromorphic device for the analog computation of a linear combination of input signals, for use, for example, in an artificial neuron. The neuromorphic device provides non-volatile programming of the weights, and fast evaluation and programming, and is suitable for fabrication at high density as part of a plurality of neuromorphic devices. The neuromorphic device is implemented as a vertical stack of flash-like cells with a common control gate contact and individually contacted source-drain (SD) regions. The vertical stacking of the cells enables efficient use of layout resources.
Public/Granted literature
- US20180174034A1 HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT Public/Granted day:2018-06-21
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