Invention Grant
- Patent Title: Magnetic storage element
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Application No.: US16091732Application Date: 2017-03-09
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Publication No.: US10861521B2Publication Date: 2020-12-08
- Inventor: Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
- Applicant: SONY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2016-084336 20160420
- International Application: PCT/JP2017/009571 WO 20170309
- International Announcement: WO2017/183354 WO 20171026
- Main IPC: H01L43/10
- IPC: H01L43/10 ; G11C11/16 ; H01L43/02 ; H01L43/08 ; H01L27/22

Abstract:
A magnetic storage element includes a first magnetic layer having a magnetization easy axis in a direction perpendicular to a surface of the first magnetic layer. A first non-magnetic layer is on the first magnetic layer. A second magnetic layer is on the first non-magnetic layer and has a fixed magnetization direction. A second non-magnetic layer is on the second magnetic layer. A third magnetic layer is on the second non-magnetic layer and has a fixed magnetization direction perpendicular to a surface of the third magnetic layer. A third non-magnetic layer is on the third magnetic layer. A storage layer on the third non-magnetic layer and having a variable magnetization direction with a magnetization easy axis in a direction perpendicular to a surface of the storage layer. Change in a magnetization direction of the first magnetic layer is easier than in the storage layer.
Public/Granted literature
- US20190156875A1 MAGNETIC STORAGE ELEMENT Public/Granted day:2019-05-23
Information query
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