Invention Grant
- Patent Title: Spin current magnetization rotational magnetic element, spin current magnetization rotational magnetoresistance effect element, and magnetic memory
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Application No.: US16506270Application Date: 2019-07-09
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Publication No.: US10861523B2Publication Date: 2020-12-08
- Inventor: Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2018-163441 20180831
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01F10/32 ; G11C11/18 ; H01L27/22 ; H01L43/08 ; H01L43/04 ; H01L43/14

Abstract:
A spin current magnetization rotational magnetic element in which magnetization can be rotated without applying an external magnetic field, power saving and a degree of integration can be enhanced. The spin current magnetization rotational magnetic element includes a spin-orbit torque wiring in a first direction; a first ferromagnetic layer in a second direction, a magnetization direction of the first ferromagnetic layer being configured to change; and a spin injection layer which is in contact with a surface of the spin-orbit torque wiring on a side opposite to the first ferromagnetic layer side and laminated in the second direction, in which the magnetization direction of the first ferromagnetic layer is a Z direction and the magnetization direction of the spin injection layer is an X direction in the first direction.
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