Systems and methods for reducing write error rate in MeRAM applications in accordance with various embodiments of the invention are illustrated. One embodiment includes a method for a writing mechanism for a magnetoelectric random access memory cell, the method including applying a voltage of a given polarity for a given period of time across a magnetoelectric junction bit of the magnetoelectric random access memory cell, wherein application of the voltage of the given polarity across the magnetoelectric junction bit reduces the perpendicular magnetic anisotropy and magnetic coercivity of the ferromagnetic free layer through a voltage controlled magnetic anisotropy effect, and lowering the applied voltage of the given polarity before the end of the given period of time, wherein the given period of time is approximately half of a precessional period of the ferromagnetic free layer.