A semiconductor memory device according to one embodiment includes: a memory cell, the memory cell including a ferroelectric film; and a control circuit controlling the memory cell. Additionally, the control circuit determining whether the number of times of executions of a write process or an erase process on the memory cell has reached a predetermined number of times; and, if the number of times of executions has reached the predetermined number of times, executing a voltage application process in which a first voltage of a first polarity and a second voltage of a second polarity opposite to the first polarity are applied to the ferroelectric film.