Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US16090716Application Date: 2016-04-08
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Publication No.: US10861530B2Publication Date: 2020-12-08
- Inventor: Yasutoshi Yamada , Ryuji Takishita
- Applicant: ULTRAMEMORY INC.
- Applicant Address: JP Tokyo
- Assignee: Ultramemory Inc.
- Current Assignee: Ultramemory Inc.
- Current Assignee Address: JP Tokyo
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- International Application: PCT/JP2016/061582 WO 20160408
- International Announcement: WO2017/175392 WO 20171012
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/408

Abstract:
The purpose of the present invention is to achieve a system for solving a row hammer issue without significantly increasing a DRAM chip area. A semiconductor storage device comprises: a memory unit including a plurality of memory cells; an address latch unit that receives an active command and an address therefor, and latches and holds the address every time the active command is received; a refresh control unit that, when receiving a refresh command, instructs a memory access control unit to carry out a regular refresh operation while instructing the memory access control unit to carry out an interrupt refresh operation for an address near the address latched by the address latch unit; and the memory access control unit that carries out the regular refresh operation and the interrupt refresh operation for the memory unit on the basis of the instruction from the refresh control unit.
Public/Granted literature
- US20190122722A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2019-04-25
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