Invention Grant
- Patent Title: Adaptive memory cell write conditions
-
Application No.: US16334743Application Date: 2017-09-21
-
Publication No.: US10861544B2Publication Date: 2020-12-08
- Inventor: Brent Haukness , Zhichao Lu
- Applicant: Hefei Reliance Memory Limited
- Applicant Address: CN Hefei
- Assignee: Hefei Reliance Memory Limited
- Current Assignee: Hefei Reliance Memory Limited
- Current Assignee Address: CN Hefei
- Agency: Sheppard Mullin Richter & Hampton LLP
- International Application: PCT/US2017/052761 WO 20170921
- International Announcement: WO2018/057766 WO 20180329
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/56
Abstract:
A method and related apparatus for using an indication of RRAM cell resistance to determine a write condition are disclosed. A cell characteristic of an RRAM cell is determined to a finer resolution than a data read value. A write condition is selected for the RRAM cell, based on the cell characteristic. The RRAM cell is written to, using the selected write condition.
Public/Granted literature
- US20190392898A1 ADAPTIVE MEMORY CELL WRITE CONDITIONS Public/Granted day:2019-12-26
Information query
