Invention Grant
- Patent Title: Substrate carrier deterioration detection and repair
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Application No.: US15794352Application Date: 2017-10-26
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Publication No.: US10861692B2Publication Date: 2020-12-08
- Inventor: Jen-Ti Wang , Chih-Wei Lin , Fu-Hsien Li , Yi-Ming Chen , Cheng-Ho Hung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; G01N33/00 ; B23P6/00 ; H01L21/66 ; G01B11/24 ; H01L21/673 ; H01L21/677 ; B25J18/00 ; B25J1/04
Abstract:
A method includes receiving a carrier with a plurality of wafers inside; supplying a purge gas to an inlet of the carrier; extracting an exhaust gas from an outlet of the carrier; and generating a health indicator of the carrier while performing the supplying of the purge gas and the extracting of the exhaust gas.
Public/Granted literature
- US20190131119A1 Substrate Carrier Deterioration Detection and Repair Public/Granted day:2019-05-02
Information query
IPC分类:
