Invention Grant
- Patent Title: Diode array for connecting to phase change memory and method forming same
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Application No.: US16154361Application Date: 2018-10-08
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Publication No.: US10861700B2Publication Date: 2020-12-08
- Inventor: Fang-Shi Jordan Lai , ChiaHua Ho , Fu-Liang Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L27/24 ; H01L45/00 ; H01L21/762 ; H01L29/861

Abstract:
An integrated circuit structure includes a semiconductor substrate; a diode; and a phase change element over and electrically connected to the diode. The diode includes a first doped semiconductor region of a first conductivity type, wherein the first doped semiconductor region is embedded in the semiconductor substrate; and a second doped semiconductor region over and adjoining the first doped semiconductor region, wherein the second doped semiconductor region is of a second conductivity type opposite the first conductivity type.
Public/Granted literature
- US20190051528A1 Phase Change Memory with Diodes Embedded in Substrate Public/Granted day:2019-02-14
Information query
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