Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14754427Application Date: 2015-06-29
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Publication No.: US10861701B2Publication Date: 2020-12-08
- Inventor: Jia-Ming Lin , Shiu-Ko Jangjian , Chun-Che Lin
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/40 ; H01L21/285 ; H01L29/49 ; H01L29/51 ; H01L29/66 ; H01L21/28 ; H01L21/768
Abstract:
A semiconductor device includes a substrate, at least one layer, a metal adhesive, and a metal structure. The layer is disposed on the substrate. The layer has an opening, and the opening has a bottom surface and at least one sidewall. The metal adhesive is disposed on the bottom surface of the opening while leaving at least a portion of the sidewall of the opening exposed. The metal structure is disposed in the opening and on the metal adhesive.
Public/Granted literature
- US20160380066A1 SEMICONDUCTOR DEVICE AND MANUFACUTRING METHOD THEREOF Public/Granted day:2016-12-29
Information query
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