Invention Grant
- Patent Title: Controlled residence CMP polishing method
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Application No.: US15725936Application Date: 2017-10-05
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Publication No.: US10861702B2Publication Date: 2020-12-08
- Inventor: John Vu Nguyen , Tony Quan Tran , Jeffrey James Hendron , Jeffrey Robert Stack
- Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Applicant Address: US DE Newark
- Assignee: Rohm and Haas Electronic Materials CMP Holdings
- Current Assignee: Rohm and Haas Electronic Materials CMP Holdings
- Current Assignee Address: US DE Newark
- Agent Blake T. Biederman
- Main IPC: H01L21/304
- IPC: H01L21/304 ; B24B37/00 ; B24B37/26 ; C09G1/02 ; C09K3/14 ; H01L21/02 ; H01L21/3105 ; H01L21/321 ; H01L21/67

Abstract:
The invention provides a method for polishing or planarizing a wafer of at least one of semiconductor, optical and magnetic substrates. The method includes rotating a polishing pad, the rotating polishing pad having radial feeder grooves in the polishing layer separating the polishing layer into polishing regions. The polishing regions are circular sectors defined by two adjacent radial feeder grooves. The radial feeder grooves extend from a location adjacent the center to a location adjacent the outer edge. Each polishing region includes a series of biased grooves connecting a pair of adjacent radial feeder grooves. Pressing and rotating the wafer against the rotating polishing pad for multiple rotations of the polishing pad adjusts polishing by either increasing or decreasing residence time of the polishing fluid under the wafer.
Public/Granted literature
- US20180366332A1 CONTROLLED RESIDENCE CMP POLISHING METHOD Public/Granted day:2018-12-20
Information query
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